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Dosimetry Intercomparison for a Synchrotron-Produced Monochromatic X-Ray Beam


T Brown

T A D Brown1*, K R Hogstrom1,2, D Alvarez2, K Ham2, K L Matthews II2, (1) Mary Bird Perkins Cancer Center, Baton Rouge, LA, (2) Louisiana State University and A & M College, Baton Rouge, LA

SU-E-T-101 Sunday 3:00:00 PM - 6:00:00 PM Room: Exhibit Hall

Purpose: This study performed a dosimetry intercomparison for synchrotron-produced monochromatic x-ray beams. Ion chamber depth-dose measurements in a polymethylmethacrylate (PMMA) phantom were compared with the product of MCNP5 Monte Carlo calculations of dose per fluence and measured incident fluence at 25 and 35 keV. The ion chamber measurements are being used to calibrate dose output for cell irradiations designed to investigate photoactivated Auger electron therapy at the LSU Center for Advanced Microstructures and Devices (CAMD) synchrotron facility.

Methods: Monochromatic beams of 25 and 35 keV were generated on the tomography beamline at CAMD. A cylindrical, air-equivalent ion chamber was used to measure the ionization created in a 10x10x10-cm³ PMMA phantom at depths of 0.6 - 7.7 cm. AAPM TG-61 protocol was applied to convert measured ionization into dose. MCNP5 simulations of the irradiation geometry were performed to determine the dose deposition per photon fluence in the phantom. Photon fluence was determined using a NaI detector to make scattering measurements of the beam from a polyethylene target at angles 15 - 60 degrees. Differential Compton and Rayleigh scattering cross sections were used to derive the incident fluence.

Results: At 35 keV dose measurements for equal exposures determined using the MCNP5-fluence results underestimated those of the ion chamber by 1.8 - 4.8 % for PMMA depths from 0.6 - 7.7 cm, respectively. At 25 keV there was an overestimate of 6.6 - 1.9 %.

Conclusions: These results show that TG-61 ion chamber dosimetry, used to calibrate the dose output for the cell irradiations, is accurate within approximately 7 % for beam energies 25-35 keV.

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